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IPB50CN10NGATMA1

MOSFET N-CH 100V 20A TO263-3

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

Stock : 3000

Packaging Type

Bulk

VendorPart#

2156-IPB50CN10NGATMA1-ITTR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 437

Mult: 437

Order Value

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

IPB50CN10NGATMA1TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1090 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)	44W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	50mOhm @ 20A, 10V
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 20µA