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IPB136N08N3GATMA1

N-CHANNEL POWER MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 4000

Packaging Type

Bulk

VendorPart#

2156-IPB136N08N3GATMA1-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 611

Mult: 611

Order Value

Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 40 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)	79W (Tc)
Rds On (Max) @ Id, Vgs	13.9mOhm @ 45A, 10V
Supplier Device Package	PG-TO263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 33µA