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IPB042N10N3GE8187ATMA1

Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R

DigiKey Electronics

Part Status : Discontinued at Digi-Key

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

IPB042N10N3GE8187ATMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8410pF @ 50V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging	Tape & Reel (TR)
Part Status	Active
Power Dissipation (Max)	214W (Tc)
Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Supplier Device Package	D²PAK (TO-263AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 150µA