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IPB025N08N3GATMA1

IPB025N08N3GATMA1

Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3

Mfr Part #

IPB025N08N3GATMA1

Life Cycle

HSN Code

85412900

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IPB025N08N3GATMA1

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 11000

Packaging Type

Tape & Reel (TR)

VendorPart#

IPB025N08N3GATMA1TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1000
Mult: 1000

Element14

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

1775525

Factory Lead Time

358 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 11354

Packaging Type

Cut Tape (CT)

VendorPart#

IPB025N08N3GATMA1CT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 11354

Packaging Type

Digi-Reel®

VendorPart#

IPB025N08N3GATMA1DKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Case

PG-TO263-3

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drain current

120A

Drain to Source Voltage (Vdss)

80 V

Drain-source voltage

80V

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

206 nC @ 10 V

Gate-source voltage

±20V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

14200 pF @ 40 V

Kind of channel

enhanced

Manufacturer

INFINEON TECHNOLOGIES

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

2.5mΩ

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Polarisation

Unipolar

Power dissipation

300W

Power Dissipation (Max)

300W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

2.5mOhm @ 100A, 10V

Supplier Device Package

PG-TO263-3

SVHC

No SVHC (08-Jul-2021)

Technology

MOSFET (Metal Oxide)

Technology

OptiMOSâ„¢ 3

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

3.5V @ 270µA