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IMZC120R034M2HXKSA1

IMZC120R034M2HXKSA1

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2

Category

Mfr Part #

IMZC120R034M2HXKSA1

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 226

Packaging Type

Tube

VendorPart#

448-IMZC120R034M2HXKSA1-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

726-IMZC120R034M2HXK

Factory Lead Time

84 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Element14

Element14

Stock : 221

Packaging Type

EACH

VendorPart#

4574253

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Channel Type

N Channel

Continuous Drain Current Id

55A

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drain Source On State Resistance

0.034ohm

Drain Source Voltage Vds

1.2kV

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

euEccn

NLR

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

45 nC @ 18 V

Gate Source Threshold Voltage Max

5.1V

Grade

-

hazardous

false

Input Capacitance (Ciss) (Max) @ Vds

1510 pF @ 800 V

MOSFET Module Configuration

Single

Mounting Type

Through Hole

No. of Pins

4Pins

Operating Temperature

-55°C ~ 175°C (TJ)

Operating Temperature Max

175°C

Package / Case

TO-247-4

Power dissipation

244W

Power Dissipation (Max)

244W (Tc)

Product Range

CoolSiC Gen 2 Series

productTraceability

No

Qualification

-

Rds On (Max) @ Id, Vgs

34mOhm @ 20A, 18V

Rds(on) Test Voltage

18V

rohsCompliant

Yes

rohsPhthalatesCompliant

TBA

Supplier Device Package

PG-TO247-4-17

SVHC

No SVHC (27-Jun-2024)

tariffCode

85381090

Technology

SiC (Silicon Carbide Junction Transistor)

Transistor Case Style

TO-247

usEccn

EAR99

Vgs (Max)

+23V, -7V

Vgs(th) (Max) @ Id

5.1V @ 6.4mA