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IMZA65R060M2HXKSA1

IMZA65R060M2HXKSA1

SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2

Category

Mfr Part #

IMZA65R060M2HXKSA1

Mfr

Life Cycle

New Product

HSN Code

85412900

Infineon Technologies

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Suppliers

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 310

Packaging Type

Tube

VendorPart#

448-IMZA65R060M2HXKSA1-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Part Status : STOCKED

Element14

Stock : 230

Packaging Type

EACH

VendorPart#

4573837

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 358

Packaging Type

-

VendorPart#

726-IMZA65R060M2HXKS

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Channel Type

N Channel
Continuous Drain Current Id

32.8A
Current - Continuous Drain (Id) @ 25°C

32.8A (Tc)
Drain Source On State Resistance

0.073ohm
Drain Source Voltage Vds

650V
Drain to Source Voltage (Vdss)

650 V
Drive Voltage (Max Rds On, Min Rds On)

15V, 20V
euEccn

NLR
FET Feature

-
FET Type

N-Channel
Gate Charge (Qg) (Max) @ Vgs

19 nC @ 18 V
Gate Source Threshold Voltage Max

5.6V
Grade

-
hazardous

false
Input Capacitance (Ciss) (Max) @ Vds

669 pF @ 400 V
MOSFET Module Configuration

Single
Mounting Type

Through Hole
No. of Pins

4Pins
Operating Temperature

-55°C ~ 175°C (TJ)
Operating Temperature Max

175°C
Package / Case

TO-247-4
Power dissipation

130W
Power Dissipation (Max)

130W (Tc)
Product Range

CoolSiC G2 Series
productTraceability

No
Qualification

-
Rds On (Max) @ Id, Vgs

55mOhm @ 15.4A, 20V
Rds(on) Test Voltage

18V
rohsCompliant

Yes
rohsPhthalatesCompliant

TBA
Supplier Device Package

PG-TO247-4-8
SVHC

No SVHC (21-Jan-2025)
tariffCode

85411000
Technology

SiC (Silicon Carbide Junction Transistor)
Transistor Case Style

TO-247
usEccn

EAR99
Vgs (Max)

+23V, -7V
Vgs(th) (Max) @ Id

5.6V @ 3.1mA