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IMZA65R040M2HXKSA1

IMZA65R040M2HXKSA1

MOSFET SILICON CARBIDE MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

448-IMZA65R040M2HXKSA1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

4378745

Factory Lead Time

169 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

726-IMZA65R040M2HXKS

Factory Lead Time

161 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 18 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	997 pF @ 400 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Packaging	tube
Power Dissipation (Max)	172W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	36mOhm @ 22.9A, 20V
Supplier Device Package	PG-TO247-4-8
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+23V, -7V
Vgs(th) (Max) @ Id	5.6V @ 4.6mA