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IMW120R014M1HXKSA1

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

IMW120R014M1HXKSA1

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Part Status : Active

DigiKey Electronics

Stock : 323

Packaging Type

Tube

VendorPart#

448-IMW120R014M1HXKSA1-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Case	TO247
Current - Continuous Drain (Id) @ 25°C	127A (Tc)
Drain current	89.3A
Drain to Source Voltage (Vdss)	1200 V
Drain-source voltage	1.2kV
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 18 V
Gate-source voltage	-7...20V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	4580 pF @ 800 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	INFINEON TECHNOLOGIES
Mounting	THT
Mounting Type	Through Hole
On-state resistance	27mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Polarisation	Unipolar
Power dissipation	227W
Power Dissipation (Max)	455W (Tc)
Pulsed drain current	267.9A
Qualification	-
Rds On (Max) @ Id, Vgs	18.4mOhm @ 54.3A, 18V
Supplier Device Package	PG-TO247-3
Technology	SiCFET (Silicon Carbide)
Technology	SiC
Technology	CoolSiC™
Type of transistor	N-MOSFET
Vgs (Max)	+20V, -5V
Vgs(th) (Max) @ Id	5.2V @ 23.4mA