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IMT65R010M2HXUMA1

IMT65R010M2HXUMA1

SiC MOSFETs SILICON CARBIDE MOSFET

Category

Mfr Part #

IMT65R010M2HXUMA1

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

448-IMT65R010M2HXUMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 2000
Mult: 2000

0

Mouser Electronics

Mouser Electronics

Stock : 31

Packaging Type

-

VendorPart#

726-IMT65R010M2HXUMA

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

448-IMT65R010M2HXUMA1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

448-IMT65R010M2HXUMA1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

168A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

15V, 20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

113 nC @ 18 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

4001 pF @ 400 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

8-PowerSFN

Power Dissipation (Max)

681W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

9.1mOhm @ 92.1A, 20V

Supplier Device Package

PG-HSOF-8-2

Technology

SiC (Silicon Carbide Junction Transistor)

Vgs (Max)

+23V, -7V

Vgs(th) (Max) @ Id

5.6V @ 18.7mA