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BOMIMDQ65R010M2HXUMA1
IMDQ65R010M2HXUMA1
SiC MOSFETs SILICON CARBIDE MOSFET
Category
Mfr Part #
IMDQ65R010M2HXUMA1
Life Cycle
New Product
HSN Code
85412900
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Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges
SiC MOSFETs SILICON CARBIDE MOSFET
Category
Mfr Part #
IMDQ65R010M2HXUMA1
Life Cycle
New Product
HSN Code
85412900
Top notch industry experts are waiting to help you. Get a free quote today!
Suppliers
Packaging Type
-
VendorPart#
726-IMDQ65R010M2HXUM
Ware House
US Warehouse
HTS Code
8541290095
Date Code
Within 2 years
Packaging Type
Digi-Reel®
VendorPart#
448-IMDQ65R010M2HXUMA1DKR-ND
Factory Lead Time
0 Days
Ware House
US Warehouse
HTS Code
8541290095
Date Code
Within 2 years
0
Packaging Type
Cut Tape (CT)
VendorPart#
448-IMDQ65R010M2HXUMA1CT-ND
Factory Lead Time
0 Days
Ware House
US Warehouse
HTS Code
8541290095
Date Code
Within 2 years
0
Packaging Type
EACH (SUPPLIED ON CUT TAPE)
VendorPart#
4667118RL
Ware House
UK Warehouse
Date Code
Within 2 years
Packaging Type
EACH (SUPPLIED ON CUT TAPE)
VendorPart#
4667118
Ware House
UK Warehouse
Date Code
Within 2 years
| Current - Continuous Drain (Id) @ 25°C | 154A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 18 V |
| Grade | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4002 pF @ 400 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | 22-PowerBSOP Module |
| Power Dissipation (Max) | 651W (Tc) |
| Qualification | - |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 92.1A, 20V |
| Supplier Device Package | PG-HDSOP-22-1 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 5.6V @ 18.7mA |