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IMBG65R026M2HXTMA1

IMBG65R026M2HXTMA1

SiC MOSFETs SILICON CARBIDE MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

448-IMBG65R026M2HXTMA1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

448-IMBG65R026M2HXTMA1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

448-IMBG65R026M2HXTMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1000

Mult: 1000

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 300

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4640387

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 496

Packaging Type

VendorPart#

726-IMBG65R026M2HXTM

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Continuous Drain Current Id	68A
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drain Source On State Resistance	0.024ohm
Drain Source Voltage Vds	650V
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
euEccn	NLR
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 18 V
Gate Source Threshold Voltage Max	5.6V
Grade	-
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	1499 pF @ 400 V
MOSFET Module Configuration	Single
Mounting Type	Surface Mount
No. of Pins	7Pins
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power dissipation	263W
Power Dissipation (Max)	263W (Tc)
Product Range	CoolSiC Gen 2 Series
productTraceability	No
Qualification	-
Rds On (Max) @ Id, Vgs	24mOhm @ 34.5A, 20V
Rds(on) Test Voltage	20V
rohsCompliant	Yes
rohsPhthalatesCompliant	TBA
Supplier Device Package	PG-TO263-7-12
SVHC	No SVHC (21-Jan-2025)
tariffCode	85411000
Technology	SiC (Silicon Carbide Junction Transistor)
Transistor Case Style	TO-263 (D2PAK)
usEccn	EAR99
Vgs (Max)	+23V, -7V
Vgs(th) (Max) @ Id	5.6V @ 7mA