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IMBG120R040M2HXTMA1

IMBG120R040M2HXTMA1

MOSFET N-CH 1200V 52A TO263-8

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2122

Packaging Type

Cut Tape (CT)

VendorPart#

448-IMBG120R040M2HXTMA1CT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2122

Packaging Type

Digi-Reel®

VendorPart#

448-IMBG120R040M2HXTMA1DKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2000

Packaging Type

Tape & Reel (TR)

VendorPart#

448-IMBG120R040M2HXTMA1TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1000

Mult: 1000

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 18 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1310 pF @ 800 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max)	250W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	39.6mOhm @ 17.5A, 18V
Supplier Device Package	PG-TO263-7-12
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -10V
Vgs(th) (Max) @ Id	5.1V @ 5.5mA