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IGLD65R080D2AUMA1

IGLD65R080D2AUMA1

GaN FETs CoolGaN Transistor 650 V G5

Category

Mfr Part #

IGLD65R080D2AUMA1

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

448-IGLD65R080D2AUMA1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

448-IGLD65R080D2AUMA1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

448-IGLD65R080D2AUMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 3000
Mult: 3000

0

Mouser Electronics

Mouser Electronics

Stock : 2974

Packaging Type

-

VendorPart#

726-IGLD65R080D2AUMA

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

-

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

3.3 nC @ 3 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

240 pF @ 400 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-LDFN Exposed Pad

Power Dissipation (Max)

68W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

-

Supplier Device Package

PG-LSON-8-2

Technology

GaNFET (Gallium Nitride)

Vgs (Max)

-10V

Vgs(th) (Max) @ Id

1.6V @ 1.8mA