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IAUC100N10S5L054ATMA1

IAUC100N10S5L054ATMA1

Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W

Mfr Part #

IAUC100N10S5L054ATMA1

Life Cycle

ONLY_FOR_SPECIAL_ORDER

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

448-IAUC100N10S5L054ATMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 5000
Mult: 5000

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IAUC100N10S5L054

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 5000
Mult: 5000

0

Specifications

Case

PG-TDSON-8

Current - Continuous Drain (Id) @ 25°C

101A (Tj)

Drain current

17A

Drain to Source Voltage (Vdss)

100 V

Drain-source voltage

100V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

FET Type

N-Channel

Gate charge

53nC

Gate Charge (Qg) (Max) @ Vgs

53 nC @ 10 V

Gate-source voltage

±20V

Input Capacitance (Ciss) (Max) @ Vds

3744 pF @ 50 V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

INFINEON TECHNOLOGIES

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

8.1mΩ

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR)

Polarisation

Unipolar

Power dissipation

130W

Power Dissipation (Max)

130W (Tc)

Pulsed drain current

400A

Rds On (Max) @ Id, Vgs

5.4mOhm @ 50A, 10V

Supplier Device Package

PG-TDSON-8-34

Technology

MOSFET (Metal Oxide)

Technology

OptiMOSâ„¢ 5

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

2.2V @ 64µA