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FF7MR12W1M1HB17BPSA1

FF7MR12W1M1HB17BPSA1

MOSFET Modules EASY STANDARD

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 24

Packaging Type

Tray

VendorPart#

448-FF7MR12W1M1HB17BPSA1-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 24

Packaging Type

EACH

VendorPart#

4412426

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 24

Packaging Type

VendorPart#

726-FF7MR12W1M1HB17B

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Configuration	2 N-Channel (Half Bridge)
Continuous Drain Current Id	105A
Current - Continuous Drain (Id) @ 25°C	105A (Tj)
Drain Source On State Resistance	0.0058ohm
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200V (1.2kV)
euEccn	NLR
FET Feature	Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs	400nC @ 18V
Gate Source Threshold Voltage Max	5.15V
Grade	-
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	12100pF @ 800V
Mounting Type	Chassis Mount
Operating Temperature	-40°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	Module
Packaging	Tray
Power - Max	20mW
Power dissipation	20mW
Product Range	EasyDUAL Series
productTraceability	No
Qualification	-
Rds On (Max) @ Id, Vgs	5.8mOhm @ 120A, 18V
Rds(on) Test Voltage	18V
rohsCompliant	Yes
rohsPhthalatesCompliant	TBA
Supplier Device Package	AG-EASY1B
SVHC	No SVHC (27-Jun-2018)
tariffCode	85411000
Technology	Silicon Carbide (SiC)
usEccn	EAR99
Vgs(th) (Max) @ Id	5.15V @ 56mA