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BSZ105N04NSGATMA1

BSZ105N04NSGATMA1

Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8

Mfr Part #

BSZ105N04NSGATMA1

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*


Packaging Type

Cut Tape (CT)

VendorPart#

BSZ105N04NSGATMA1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 0
Mult: 0

0

DigiKey Electronics

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*


Packaging Type

Tape & Reel (TR)

VendorPart#

BSZ105N04NSGATMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 0
Mult: 0

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

BSZ105N04NSGATMA1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Element14

Element14

Stock : 0

Packaging Type

-

VendorPart#

1775504

Factory Lead Time

190 Days

Ware House

UK Warehouse

Date Code

Min: 1
Mult: 1

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

BSZ105N04NSG

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

PG-TSDSON-8

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 40A (Tc)

Drain current

29A

Drain to Source Voltage (Vdss)

40 V

Drain-source voltage

40V

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

-

FET Type

N-Channel

Gate charge

13nC

Gate Charge (Qg) (Max) @ Vgs

17 nC @ 10 V

Gate-source voltage

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300 pF @ 20 V

Manufacturer

INFINEON TECHNOLOGIES

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

10.5mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-PowerTDFN

Polarisation

Unipolar

Power dissipation

35W

Power Dissipation (Max)

2.1W (Ta), 35W (Tc)

Rds On (Max) @ Id, Vgs

10.5mOhm @ 20A, 10V

Supplier Device Package

PG-TSDSON-8

Technology

MOSFET (Metal Oxide)

Technology

OptiMOSâ„¢ 3

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

4V @ 14µA