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BSZ100N03LSGATMA1

BSZ100N03LSGATMA1

Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

BSZ100N03LSGATMA1

Factory Lead Time

0 Days

Ware House

Poland Warehouse

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Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

BSZ100N03LSGATMA1TR-ND

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0 Days

Ware House

US Warehouse

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Quantity

Min: 5000

Mult: 5000

Order Value

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 2286

Packaging Type

VendorPart#

BSZ100N03LSGATMA1DKR-ND

Ware House

US Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 2286

Packaging Type

VendorPart#

BSZ100N03LSGATMA1CT-ND

Ware House

US Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	PG-TSDSON-8
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 40A (Tc)
Drain current	36A
Drain to Source Voltage (Vdss)	30V
Drain-source voltage	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Gate-source voltage	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
Manufacturer	INFINEON TECHNOLOGIES
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	10mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Packaging	Tape & Reel (TR)
Part Status	Active
Polarisation	Unipolar
Power dissipation	30W
Power Dissipation (Max)	2.1W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 20A, 10V
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Technology	OptiMOS™ 3
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 250µA