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BSS83IXUSA1

BSS83IXUSA1

INFINEON - BSS83IXUSA1 - Power MOSFET, P Channel, 60 V, 550 mA, 1.7 ohm, SOT-23, Surface Mount

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4707476

Factory Lead Time

92 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 5

Mult: 5

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4707476RL

Factory Lead Time

92 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 500

Mult: 5

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

448-BSS83IXUSA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 3000

Mult: 3000

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

448-BSS83IXUSA1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

448-BSS83IXUSA1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	P Channel
Continuous Drain Current Id	550mA
Current - Continuous Drain (Id) @ 25°C	320mA (Ta), 550mA (Tc)
Drain Source On State Resistance	1.7Ohm
Drain Source Voltage Vds	60V
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
euEccn	NLR
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.09 nC @ 4.5 V
Gate Source Threshold Voltage Max	2V
Grade	-
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	72 pF @ 30 V
Mounting Type	Surface Mount
No. of Pins	3Pins
Operating Temperature	-55°C ~ 150°C (TJ)
Operating Temperature Max	150°C
Package / Case	TO-236-3, SC-59, SOT-23-3
Power dissipation	1.04W
Power Dissipation (Max)	400mW (Ta), 1.04W (Tc)
Product Range	-
productTraceability	No
Qualification	-
Rds On (Max) @ Id, Vgs	1.7Ohm @ 300mA, 10V
Rds(on) Test Voltage	10V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	PG-SOT23-3-U03
SVHC	No SVHC (21-Jan-2025)
tariffCode	85411000
Technology	MOSFET (Metal Oxide)
Transistor Case Style	SOT-23
Transistor Mounting	Surface Mount
usEccn	EAR99
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 34µA