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IRFP150

Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

2156-IRFP150-HC-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 214

Mult: 214

Order Value

Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2.8pF @ 25V
Manufacturer	Rochester Electronics, LLC
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Packaging	tube
Part Status	Obsolete
Power Dissipation (Max)	230W (Tc)
Rds On (Max) @ Id, Vgs	55mOhm @ 25A, 10V
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA