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GS120R045Q4

SiC MOSFET N-CH 1200V 60A TO-24

DigiKey Electronics

Part Status : Active

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tube

VendorPart#

4822-GS120R045Q4-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290000

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2565 pF @ 1000 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Power Dissipation (Max)	395W (Tc)
Rds On (Max) @ Id, Vgs	52mOhm @ 20A, 18V
Supplier Device Package	TO-247-4L
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	-10V, +20V
Vgs(th) (Max) @ Id	4V @ 10mA