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GA04JT17-247

GA04JT17-247

MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

1242-1134-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 90

Mult: 90

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

905-GA04JT17-247

Factory Lead Time

140 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 630

Mult: 30

Order Value

Element14

Part Status : NO_LONGER_MANUFACTURED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

2280263

Factory Lead Time

136 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	4A (Tc) (95°C)
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	-
FET Feature	-
FET Type	-
Gate Source Breakdown Voltage Max	-
Mounting Type	Through Hole
Operating Temperature	175°C (TJ)
Package / Case	TO-247-3
Packaging	tube
Power Dissipation (Max)	106W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	480mOhm @ 4A
Supplier Device Package	TO-247AB
SVHC	No SVHC (17-Dec-2015)
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	-
Vgs(th) (Max) @ Id	-