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G3R75MT12K

G3R75MT12K

SiC MOSFETs 1200V 75mohm TO-247-4 G3R SiC MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1446

Packaging Type

Tube

VendorPart#

1242-G3R75MT12K-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 1692

Packaging Type

VendorPart#

905-G3R75MT12K

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 529

Packaging Type

VendorPart#

G3R75MT12K

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	TO247-4
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drain current	29A
Drain to Source Voltage (Vdss)	1200 V
Drain-source voltage	1.2kV
Drive Voltage (Max Rds On, Min Rds On)	15V
Features of semiconductor devices	Kelvin terminal
FET Feature	-
FET Type	N-Channel
Gate charge	54nC
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 15 V
Gate-source voltage	-5...15V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 800 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	GeneSiC Semiconductor
Mounting	THT
Mounting Type	Through Hole
On-state resistance	75mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Polarisation	Unipolar
Power dissipation	207W
Power Dissipation (Max)	207W (Tc)
Pulsed drain current	80A
Qualification	-
Rds On (Max) @ Id, Vgs	90mOhm @ 20A, 15V
Supplier Device Package	TO-247-4
Technology	SiCFET (Silicon Carbide)
Technology	SiC
Technology	G3R™
Type of transistor	N-MOSFET
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	2.69V @ 7.5mA