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G3R75MT12D

G3R75MT12D

SiC MOSFETs 1200V 75mohm TO-247-3 G3R SiC MOSFET

Category

Mfr Part #

G3R75MT12D

Mfr

Life Cycle

HSN Code

85412900

GeneSiC Semiconductor

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Suppliers

Element14

Part Status : STOCKED

Element14

Stock : 987

Packaging Type

EACH

VendorPart#

3598622

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 1666

Packaging Type

-

VendorPart#

905-G3R75MT12D

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2218

Packaging Type

Tube

VendorPart#

1242-G3R75MT12D-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

TME

Part Status :

TME

Stock : 165

Packaging Type

-

VendorPart#

G3R75MT12D

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Channel Type

N Channel
Continuous Drain Current Id

41A
Current - Continuous Drain (Id) @ 25°C

41A (Tc)
Drain Source On State Resistance

0.075ohm
Drain Source Voltage Vds

1.2kV
Drain to Source Voltage (Vdss)

1200 V
Drive Voltage (Max Rds On, Min Rds On)

15V
euEccn

NLR
FET Feature

-
FET Type

N-Channel
Gate Charge (Qg) (Max) @ Vgs

54 nC @ 15 V
Gate Source Threshold Voltage Max

2.69V
hazardous

false
Input Capacitance (Ciss) (Max) @ Vds

1560 pF @ 800 V
MOSFET Module Configuration

Single
Mounting Type

Through Hole
No. of Pins

3Pins
Operating Temperature

-55°C ~ 175°C (TJ)
Operating Temperature Max

175°C
Package / Case

TO-247-3
Packaging

tube
Power dissipation

207W
Power Dissipation (Max)

207W (Tc)
Product Range

G3R
productTraceability

No
Rds On (Max) @ Id, Vgs

90mOhm @ 20A, 15V
Rds(on) Test Voltage

15V
rohsCompliant

Yes
rohsPhthalatesCompliant

Yes
Supplier Device Package

TO-247-3
SVHC

Lead (19-Jan-2021)
tariffCode

85411000
Technology

SiCFET (Silicon Carbide)
Transistor Case Style

TO-247
usEccn

EAR99
Vgs (Max)

+22V, -10V
Vgs(th) (Max) @ Id

2.69V @ 7.5mA