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G3R40MT12J

G3R40MT12J

SiC MOSFETs 1200V 40mohm TO-263-7 G3R SiC MOSFET

Category

Mfr Part #

G3R40MT12J

Life Cycle

HSN Code

85412900

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

G3R40MT12J

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 100
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 426

Packaging Type

Tube

VendorPart#

1242-G3R40MT12J-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

905-G3R40MT12J

Factory Lead Time

140 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Element14

Element14

Stock : 2

Packaging Type

EACH

VendorPart#

3598629

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Channel Type

N Channel

Continuous Drain Current Id

75A

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drain Source On State Resistance

0.04ohm

Drain Source Voltage Vds

1.2kV

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

15V

euEccn

NLR

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

106 nC @ 15 V

Gate Source Threshold Voltage Max

2.69V

hazardous

false

Input Capacitance (Ciss) (Max) @ Vds

2929 pF @ 800 V

MOSFET Module Configuration

Single

Mounting Type

Surface Mount

No. of Pins

7Pins

Operating Temperature

-55°C ~ 175°C (TJ)

Operating Temperature Max

175°C

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

tube

Power dissipation

374W

Power Dissipation (Max)

374W (Tc)

Product Range

G3R

productTraceability

No

Rds On (Max) @ Id, Vgs

48mOhm @ 35A, 15V

Rds(on) Test Voltage

15V

Supplier Device Package

TO-263-7

SVHC

Lead (19-Jan-2021)

tariffCode

85411000

Technology

SiCFET (Silicon Carbide)

Transistor Case Style

TO-263 (D2PAK)

usEccn

EAR99

Vgs (Max)

±15V

Vgs(th) (Max) @ Id

2.7V @ 18mA (Typ)