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G3R350MT12D

G3R350MT12D

SiC MOSFETs 1200V 350mohm TO-247-3 G3R SiC MOSFET

Category

Mfr Part #

G3R350MT12D

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 7550

Packaging Type

Tube

VendorPart#

1242-G3R350MT12D-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Element14

Stock : 57

Packaging Type

EACH

VendorPart#

3598642

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

20 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 30
Mult: 30

0

TME

TME

Stock : 432

Packaging Type

-

VendorPart#

G3R350MT12D

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Mouser Electronics

Mouser Electronics

Stock : 3596

Packaging Type

-

VendorPart#

905-G3R350MT12D

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Continuous Drain Current Id

11A

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drain Source Voltage Vds

1.2kV

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

15V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds

334 pF @ 800 V

MOSFET Configuration

Single

Mounting Type

Through Hole

No. of Pins

3Pins

On Resistance Rds(on)

0.35ohm

Operating Temperature

-55°C ~ 175°C (TJ)

Operating Temperature Max

175°C

Package / Case

TO-247-3

Packaging

tube

Part Status

Active

Power Dissipation (Max)

74W (Tc)

Power Dissipation Pd

74W

Product Range

G3R Series

Rds On (Max) @ Id, Vgs

420mOhm @ 4A, 15V

Rds(on) Test Voltage Vgs

15V

Supplier Device Package

TO-247-3

SVHC

Lead (19-Jan-2021)

Technology

SiCFET (Silicon Carbide)

Threshold Voltage Vgs

2.69V

Transistor Case Style

TO-247

Transistor Polarity

N Channel

Vgs (Max)

±15V

Vgs(th) (Max) @ Id

2.69V @ 2mA