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G3R20MT12N

G3R20MT12N

MOSFET 1200V 20mohm SOT-227 G3R SiC MOSFET

TME

Part Status :

TME

Stock : 120

Packaging Type

VendorPart#

G3R20MT12N

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status :

Element14

Stock : 4

Packaging Type

EACH

VendorPart#

3598658

Ware House

UK Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 818

Packaging Type

VendorPart#

905-G3R20MT12N

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 217

Packaging Type

Tube

VendorPart#

1242-G3R20MT12N-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Continuous Drain Current Id	105A
Current - Continuous Drain (Id) @ 25°C	105A (Tc)
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	5873 pF @ 800 V
MOSFET Configuration	Single
Mounting Type	Chassis Mount
No. of Pins	4Pins
On Resistance Rds(on)	0.02ohm
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	365W (Tc)
Power Dissipation Pd	365W
Product Range	G3R
Rds On (Max) @ Id, Vgs	24mOhm @ 60A, 15V
Rds(on) Test Voltage Vgs	15V
Supplier Device Package	SOT-227
SVHC	Lead (19-Jan-2021)
Technology	SiCFET (Silicon Carbide)
Threshold Voltage Vgs	2.69V
Transistor Case Style	SOT-227
Transistor Polarity	N Channel
Vgs (Max)	+20V, -10V
Vgs(th) (Max) @ Id	2.69V @ 15mA