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G3R160MT17J

G3R160MT17J

MOSFET 1700V 160mohm TO-263-7 G3R SiC MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

1242-G3R160MT17J-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1000

Mult: 1000

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

G3R160MT17J

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

3598632

Factory Lead Time

69 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : Part Number Change

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

905-G3R160MT17J

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	TO263-7
Channel Type	N Channel
Continuous Drain Current Id	22A
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drain current	15A
Drain Source On State Resistance	0.16ohm
Drain Source Voltage Vds	1.7kV
Drain to Source Voltage (Vdss)	1700 V
Drain-source voltage	1.7kV
Drive Voltage (Max Rds On, Min Rds On)	15V
euEccn	NLR
Features of semiconductor devices	Kelvin terminal
FET Feature	-
FET Type	N-Channel
Gate charge	51nC
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 15 V
Gate Source Threshold Voltage Max	2.7V
Gate-source voltage	-5...15V
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	854 pF @ 1000 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	GeneSiC Semiconductor Inc.
MOSFET Module Configuration	Single
Mounting	SMD
Mounting Type	Surface Mount
No. of Pins	7Pins
On-state resistance	160mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging	tube
Polarisation	Unipolar
Power dissipation	187W
Power Dissipation (Max)	187W (Tc)
Product Range	G3R
productTraceability	No
Pulsed drain current	48A
Rds On (Max) @ Id, Vgs	208mOhm @ 12A, 15V
Rds(on) Test Voltage	15V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	TO-263-7
SVHC	Lead (19-Jan-2021)
tariffCode	85411000
Technology	SiCFET (Silicon Carbide)
Technology	SiC
Technology	G3R™
Transistor Case Style	TO-263 (D2PAK)
Type of transistor	N-MOSFET
usEccn	EAR99
Vgs (Max)	±15V
Vgs(th) (Max) @ Id	2.7V @ 5mA