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G3R160MT12D

G3R160MT12D

SiC MOSFETs 1200V 160mohm TO-247-3 G3R SiC MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2766

Packaging Type

Tube

VendorPart#

1242-G3R160MT12D-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 878

Packaging Type

VendorPart#

G3R160MT12D

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 2901

Packaging Type

VendorPart#

905-G3R160MT12D

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

3598662

Factory Lead Time

43 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

20 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 900

Mult: 30

Order Value

Specifications

Case	TO247-3
Continuous Drain Current Id	22A
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drain current	16A
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drain-source voltage	1.2kV
Drive Voltage (Max Rds On, Min Rds On)	15V
FET Feature	-
FET Type	N-Channel
Gate charge	28nC
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 15 V
Gate-source voltage	-5...15V
Input Capacitance (Ciss) (Max) @ Vds	730 pF @ 800 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	GeneSiC Semiconductor Inc.
MOSFET Configuration	Single
Mounting	THT
Mounting Type	Through Hole
No. of Pins	3Pins
On Resistance Rds(on)	0.16ohm
On-state resistance	160mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-247-3
Packaging	tube
Part Status	Active
Polarisation	Unipolar
Power dissipation	123W
Power Dissipation (Max)	123W (Tc)
Power Dissipation Pd	123W
Product Range	G3R
Pulsed drain current	40A
Rds On (Max) @ Id, Vgs	192mOhm @ 10A, 15V
Rds(on) Test Voltage Vgs	15V
Supplier Device Package	TO-247-3
SVHC	Lead (19-Jan-2021)
Technology	G3R™
Technology	SiCFET (Silicon Carbide)
Technology	SiC
Threshold Voltage Vgs	2.69V
Transistor Case Style	TO-247
Transistor Polarity	N Channel
Type of transistor	N-MOSFET
Vgs (Max)	±15V
Vgs(th) (Max) @ Id	2.69V @ 5mA