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G3F25MT12J-TR

G3F25MT12J-TR

SiC MOSFETs 1200V 25mohm TO-263-7 G3F SiC MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 800

Packaging Type

Digi-Reel®

VendorPart#

1242-G3F25MT12J-TRDKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 1595

Packaging Type

VendorPart#

905-G3F25MT12J-TR

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 800

Packaging Type

Cut Tape (CT)

VendorPart#

1242-G3F25MT12J-TRCT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 800

Packaging Type

Tape & Reel (TR)

VendorPart#

1242-G3F25MT12J-TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 800

Mult: 800

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	87A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	128 nC @ 18 V
Grade	automotive
Input Capacitance (Ciss) (Max) @ Vds	3325 pF @ 800 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max)	362W (Tc)
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	34mOhm @ 34A, 18V
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.3V @ 24mA