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G2R50MT33K

G2R50MT33K

MOSFET 3300V 50mOhmTO-247-4 SiC MOSFET

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

20 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 15

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

905-G2R50MT33K

Factory Lead Time

140 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 32

Packaging Type

Tube

VendorPart#

1242-G2R50MT33K-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 18

Packaging Type

EACH

VendorPart#

4218058

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Drain to Source Voltage (Vdss)	3300 V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	340 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	7301 pF @ 1000 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Packaging	tube
Part Status	Active
Power Dissipation (Max)	536W (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Supplier Device Package	TO-247-4
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+25V, -10V
Vgs(th) (Max) @ Id	3.5V @ 10mA (Typ)