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G2R1000MT33J

G2R1000MT33J

MOSFET 3300V 1000mohm TO-263-7 G2R SiC MOSFET

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

G2R1000MT33J

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1000

Mult: 1000

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2562

Packaging Type

Tube

VendorPart#

1242-G2R1000MT33J-ND

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 20

Packaging Type

EACH

VendorPart#

3598638

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 2637

Packaging Type

VendorPart#

905-G2R1000MT33J

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

20 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 250

Mult: 1

Order Value

Specifications

Base Part Number	G2R1000
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drain to Source Voltage (Vdss)	3300V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	238pF @ 1000V
Manufacturer	GeneSiC Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging	tube
Part Status	Active
Power Dissipation (Max)	74W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Supplier Device Package	TO-263-7
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+20V, -5V
Vgs(th) (Max) @ Id	3.5V @ 2mA