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G2R1000MT17J

G2R1000MT17J

SiC MOSFETs 1700V 1000mohm TO-263-7 G2R SiC MOSFET

Category

Mfr Part #

G2R1000MT17J

Life Cycle

Part Number Change

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 11607

Packaging Type

Tube

VendorPart#

1242-G2R1000MT17J-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

TME

TME

Stock : 711

Packaging Type

-

VendorPart#

G2R1000MT17J

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Mouser Electronics

Mouser Electronics

Stock : 3787

Packaging Type

-

VendorPart#

905-G2R1000MT17J

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Element14

Stock : 97

Packaging Type

EACH

VendorPart#

3598650

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

20 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1000
Mult: 50

0

Specifications

Case

TO263-7

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drain current

4A

Drain to Source Voltage (Vdss)

1700 V

Drain-source voltage

1.7kV

Drive Voltage (Max Rds On, Min Rds On)

20V

Features of semiconductor devices

Kelvin terminal

FET Feature

-

FET Type

N-Channel

Gate-source voltage

-5...20V

Input Capacitance (Ciss) (Max) @ Vds

139 pF @ 1000 V

Kind of channel

enhanced

Kind of package

tube

Manufacturer

GeneSiC Semiconductor Inc.

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

1000MΩ

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Packaging

tube

Part Status

Active

Polarisation

Unipolar

Power dissipation

54W

Power Dissipation (Max)

54W (Tc)

Pulsed drain current

8A

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2A, 20V

Supplier Device Package

TO-263-7

Technology

SiCFET (Silicon Carbide)

Technology

SiC

Technology

G2Râ„¢

Type of transistor

N-MOSFET

Vgs (Max)

+20V, -10V

Vgs(th) (Max) @ Id

4V @ 2mA