Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges

G2R1000MT17D

G2R1000MT17D

MOSFET 1700V 1000mO TO-247-3 G2R SiC MOSFET

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 2494

Packaging Type

VendorPart#

905-G2R1000MT17D

Ware House

US Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 1

Packaging Type

EACH

VendorPart#

3598643

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

G2R1000MT17D

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 6161

Packaging Type

Tube

VendorPart#

1242-G2R1000MT17D-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Continuous Drain Current Id	4A
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drain Source Voltage Vds	1.7kV
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	111 pF @ 1000 V
MOSFET Configuration	Single
Mounting Type	Through Hole
No. of Pins	3Pins
On Resistance Rds(on)	1ohm
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-247-3
Power Dissipation (Max)	44W (Tc)
Power Dissipation Pd	53W
Product Range	G2R
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Rds(on) Test Voltage Vgs	20V
Supplier Device Package	TO-247-3
SVHC	Lead (19-Jan-2021)
Technology	SiCFET (Silicon Carbide)
Threshold Voltage Vgs	4V
Transistor Case Style	TO-247
Transistor Polarity	N Channel
Vgs (Max)	+25V, -10V
Vgs(th) (Max) @ Id	5.5V @ 500µA