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IRFW840BTM

N-CHANNEL POWER MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2466

Packaging Type

Bulk

VendorPart#

2156-IRFW840BTM-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 520

Mult: 520

Order Value

Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)	3.13W (Ta), 134W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	800mOhm @ 4A, 10V
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA