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FQI4N90TU

POWER FIELD-EFFECT TRANSISTOR, 4

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1302

Packaging Type

Bulk

VendorPart#

2156-FQI4N90TU-ND

Ware House

US Warehouse

HTS Code

8542390001

Date Code

Within 2 years

Quantity

Min: 208

Mult: 208

Order Value

Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max)	3.13W (Ta), 140W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	3.3Ohm @ 2.1A, 10V
Supplier Device Package	I2PAK (TO-262)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA