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FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1264

Packaging Type

Bulk

VendorPart#

2156-FQI4N80TU-ND

Ware House

US Warehouse

HTS Code

8542390001

Date Code

Within 2 years

Quantity

Min: 235

Mult: 235

Order Value

Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max)	3.13W (Ta), 130W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.95A, 10V
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA