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FDB2670

MOSFET N-CH 200V 19A TO263AB

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

Stock : 3668

Packaging Type

Bulk

VendorPart#

2156-FDB2670-FSTR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 192

Mult: 192

Order Value

Current - Continuous Drain (Id) @ 25°C	19A (Ta)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-65°C ~ 175°C (TJ)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)	93W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	130mOhm @ 10A, 10V
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 250µA