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FBG10N30BC

GAN FET HEMT100V30A COTS 4FSMD-B

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 154

Packaging Type

Bulk

VendorPart#

4107-FBG10N30BC-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	4-SMD, No Lead
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 5V
Supplier Device Package	4-SMD
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	+6V, -4V
Vgs(th) (Max) @ Id	2.5V @ 5mA