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DIT085N10

DIT085N10

MOSFETs MOSFET, TO-220AB, 100V, 85A, 150C, N

Category

Mfr Part #

DIT085N10

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DIT085N10-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1000
Mult: 1000

0

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

637-DIT085N10

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290000

Date Code

Within 2 years

Min: 1000
Mult: 50

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

DIT085N10-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

9 Days

Ware House

US Warehouse

HTS Code

85412900

Date Code

Within 2 years

Min: 250
Mult: 1

0

Specifications

Case

TO220AB

Case

TO220AB

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drain current

53A

Drain current

53A

Drain to Source Voltage (Vdss)

100 V

Drain-source voltage

100V

Drain-source voltage

100V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

FET Type

N-Channel

Gate charge

75nC

Gate charge

75nC

Gate Charge (Qg) (Max) @ Vgs

75 nC @ 10 V

Gate-source voltage

±20V

Gate-source voltage

±20V

Grade

-

Heatsink thickness

max. 1.2mm

Heatsink thickness

max. 1.2mm

Input Capacitance (Ciss) (Max) @ Vds

3742 pF @ 50 V

Kind of channel

enhanced

Kind of channel

enhanced

Kind of package

tube

Kind of package

tube

Manufacturer

DIOTEC SEMICONDUCTOR

Manufacturer

DIOTEC SEMICONDUCTOR

Mounting

THT

Mounting

THT

Mounting Type

Through Hole

On-state resistance

6.3mΩ

On-state resistance

6.3mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-220-3

Packaging

Bulk

Polarisation

Unipolar

Polarisation

Unipolar

Power dissipation

62.5W

Power dissipation

62.5W

Power Dissipation (Max)

62.5W (Tc)

Pulsed drain current

480A

Pulsed drain current

480A

Qualification

-

Rds On (Max) @ Id, Vgs

4.8mOhm @ 50A, 10V

Supplier Device Package

TO-220AB

Technology

MOSFET (Metal Oxide)

Type of transistor

N-MOSFET

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

2.4V @ 250µA