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DIF120SIC022

DIF120SIC022

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W

Mfr Part #

DIF120SIC022

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 30

Packaging Type

-

VendorPart#

DIF120SIC022-DIO

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Case

TO247-4

Drain current

85A

Drain-source voltage

1.2kV

Features of semiconductor devices

Kelvin terminal

Gate charge

269nC

Gate-source voltage

-4...18V

Kind of channel

enhancement

Kind of package

tube

Manufacturer

DIOTEC SEMICONDUCTOR

Mounting

THT

On-state resistance

28mΩ

Polarisation

Unipolar

Power dissipation

340W

Pulsed drain current

250A

Technology

SiC

Type of transistor

N-MOSFET