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DIF120SIC022-AQ

DIF120SIC022-AQ

SiC MOSFETs SiC MOSFET, TO-247-4L, 0, 120A, 1200V, 0.0223?, Automotive

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 450

Packaging Type

VendorPart#

637-DIF120SIC022-AQ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 30

Packaging Type

VendorPart#

DIF120SIC022-AQ

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

9 Days

Ware House

US Warehouse

HTS Code

85412900

Date Code

Within 2 years

Quantity

Min: 113

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 30

Packaging Type

EACH

VendorPart#

4552613

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 150

Packaging Type

Tube

VendorPart#

4878-DIF120SIC022-AQ-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Application	automotive industry
Case	TO247-4
Channel Type	N Channel
Continuous Drain Current Id	120A
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drain current	85A
Drain Source On State Resistance	0.0223ohm
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drain-source voltage	1.2kV
Drive Voltage (Max Rds On, Min Rds On)	18V
euEccn	NLR
Features of semiconductor devices	Kelvin terminal
FET Feature	-
FET Type	N-Channel
Gate charge	269nC
Gate Charge (Qg) (Max) @ Vgs	269 nC @ 18 V
Gate Source Threshold Voltage Max	4V
Gate-source voltage	-4...18V
Grade	automotive
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	4817 pF @ 1000 V
Kind of channel	enhancement
Kind of package	tube
Manufacturer	DIOTEC SEMICONDUCTOR
MOSFET Module Configuration	Single
Mounting	THT
Mounting Type	Through Hole
No. of Pins	4Pins
On-state resistance	28mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-247-4
Polarisation	Unipolar
Power dissipation	340W
Power Dissipation (Max)	340W (Tc)
Product Range	-
productTraceability	No
Pulsed drain current	250A
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	22.3mOhm @ 75A, 18V
Rds(on) Test Voltage	18V
rohsCompliant	Y-EX
rohsPhthalatesCompliant	Yes
Supplier Device Package	TO-247-4
SVHC	No SVHC (27-Jun-2024)
tariffCode	85411000
Technology	SiC
Technology	SiC (Silicon Carbide Junction Transistor)
Transistor Case Style	TO-247
Type of transistor	N-MOSFET
usEccn	EAR99
Vgs (Max)	+18V, -4V
Vgs(th) (Max) @ Id	4V @ 23.5mA