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DIF065SIC020

DIF065SIC020

Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W

Mfr Part #

DIF065SIC020

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 30

Packaging Type

-

VendorPart#

DIF065SIC020-DIO

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Case

TO247-4

Drain current

100A

Drain-source voltage

650V

Features of semiconductor devices

Kelvin terminal

Gate charge

236nC

Gate-source voltage

-5...18V

Kind of channel

enhancement

Kind of package

tube

Manufacturer

DIOTEC SEMICONDUCTOR

Mounting

THT

On-state resistance

16mΩ

Polarisation

Unipolar

Power dissipation

550W

Pulsed drain current

300A

Technology

SiC

Type of transistor

N-MOSFET