Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges

DI2A8N03PWK2

DI2A8N03PWK2

Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 12A; 1.4W; QFN2X2

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

DI2A8N03PWK2-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI2A8N03PWK2-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 4000

Mult: 4000

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

9 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 4000

Mult: 4000

Order Value

Specifications

Case	QFN2X2
Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Drain current	3A
Drain to Source Voltage (Vdss)	30V
Drain-source voltage	30V
Features of semiconductor devices	ESD protected gate
FET Feature	-
Gate charge	6.8nC
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 4.5V
Gate-source voltage	±12V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	387pF @ 15V
Kind of channel	enhanced
Kind of package	tape
Kind of package	reel
Manufacturer	DIOTEC SEMICONDUCTOR
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	0.102Ω
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	6-UDFN Exposed Pad
Packaging	Bulk
Polarisation	Unipolar
Power - Max	1W (Ta)
Power dissipation	1.4W
Pulsed drain current	12A
Qualification	-
Rds On (Max) @ Id, Vgs	72mOhm @ 2A, 4.5V
Supplier Device Package	6-QFN (2x2)
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET x2
Vgs(th) (Max) @ Id	1.2V @ 250µA