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DI200N10D2

DI200N10D2

MOSFETs

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

637-DI200N10D2

Factory Lead Time

126 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 207

Packaging Type

Bulk

VendorPart#

4878-DI200N10D2-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 335

Packaging Type

VendorPart#

DI200N10D2-DIO

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	D2PAK
Case	TO263AB
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drain current	185A
Drain to Source Voltage (Vdss)	100 V
Drain-source voltage	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate charge	262nC
Gate Charge (Qg) (Max) @ Vgs	262 nC @ 10 V
Gate-source voltage	±20V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	16800 pF @ 50 V
Kind of channel	enhancement
Kind of package	reel
Kind of package	tape
Manufacturer	DIOTEC SEMICONDUCTOR
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	2.3mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Polarisation	Unipolar
Power dissipation	340W
Power Dissipation (Max)	340W (Tc)
Pulsed drain current	950A
Qualification	-
Rds On (Max) @ Id, Vgs	2.3mOhm @ 120A, 10V
Supplier Device Package	TO-263AB (D2PAK)
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA