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DI110N15PQ-AQ

DI110N15PQ-AQ

MOSFETs MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N, AEC-Q101

Category

Mfr Part #

DI110N15PQ-AQ

Mfr

Life Cycle

New Product

HSN Code

85412900

Diotec Semiconductor

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Suppliers

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI110N15PQ-AQ-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 5000
Mult: 5000

0

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

637-DI110N15PQ-AQ

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290000

Date Code

Within 2 years

Min: 5000
Mult: 5000

0

TME

Part Status :

TME

Stock : 0

Packaging Type

-

VendorPart#

DI110N15PQ-AQ-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

9 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1250
Mult: 1

0

Specifications

Application

automotive industry
Case

QFN5x6
Current - Continuous Drain (Id) @ 25°C

55A (Tc)
Drain current

74A
Drain to Source Voltage (Vdss)

150 V
Drain-source voltage

150V
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
FET Feature

-
FET Type

N-Channel
Gate charge

51nC
Gate Charge (Qg) (Max) @ Vgs

69 nC @ 10 V
Gate-source voltage

±20V
Grade

automotive
Input Capacitance (Ciss) (Max) @ Vds

3700 pF @ 75 V
Kind of channel

enhanced
Kind of package

tape
Kind of package

reel
Manufacturer

DIOTEC SEMICONDUCTOR
Mounting

SMD
Mounting Type

Surface Mount
On-state resistance

14mΩ
Operating Temperature

-55°C ~ 150°C (TJ)
Package / Case

8-PowerTDFN
Packaging

Bulk
Polarisation

Unipolar
Power dissipation

62W
Power Dissipation (Max)

62.5W (Tc)
Pulsed drain current

145A
Qualification

AEC-Q101
Rds On (Max) @ Id, Vgs

11.5mOhm @ 20A, 10V
Supplier Device Package

8-QFN (5x6)
Technology

MOSFET (Metal Oxide)
Type of transistor

N-MOSFET
Vgs (Max)

±20V
Vgs(th) (Max) @ Id

2.5V @ 250µA