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DI110N03PQ

DI110N03PQ

MOSFETs MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI110N03PQ-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 5000

Mult: 5000

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 4835

Packaging Type

VendorPart#

637-DI110N03PQ

Ware House

US Warehouse

HTS Code

8541210095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

DI110N03PQ-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 5000

Mult: 5000

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

12 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1250

Mult: 1

Order Value

Specifications

Case	QFN5x6
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drain current	74A
Drain to Source Voltage (Vdss)	30 V
Drain-source voltage	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate charge	14nC
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Gate-source voltage	±20V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1860 pF @ 15 V
Kind of channel	enhanced
Kind of package	tape
Kind of package	reel
Manufacturer	DIOTEC SEMICONDUCTOR
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	2.65mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Packaging	Bulk
Polarisation	Unipolar
Power dissipation	56W
Power Dissipation (Max)	56W (Tc)
Pulsed drain current	92A
Qualification	-
Rds On (Max) @ Id, Vgs	2.65mOhm @ 20A, 10V
Supplier Device Package	8-QFN (5x6)
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA