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DI105N04PQ-AQ

DI105N04PQ-AQ

MOSFETs MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101

Category

Mfr Part #

DI105N04PQ-AQ

Life Cycle

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 4429

Packaging Type

-

VendorPart#

637-DI105N04PQ-AQ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

9 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1250
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

4878-DI105N04PQ-AQCT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

4878-DI105N04PQ-AQDKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

DI105N04PQ-AQ-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

4878-DI105N04PQ-AQTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 5000
Mult: 5000

0

Specifications

Application

automotive industry

Case

QFN5x6

Current - Continuous Drain (Id) @ 25°C

105A (Tc)

Drain current

80A

Drain to Source Voltage (Vdss)

40 V

Drain-source voltage

40V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

FET Type

N-Channel

Gate charge

23nC

Gate Charge (Qg) (Max) @ Vgs

23 nC @ 10 V

Gate-source voltage

±20V

Input Capacitance (Ciss) (Max) @ Vds

3033 pF @ 25 V

Kind of channel

enhanced

Kind of package

reel

Kind of package

tape

Manufacturer

DIOTEC SEMICONDUCTOR

Mounting

SMD

Mounting Type

Surface Mount

On-state resistance

4mΩ

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR)

Polarisation

Unipolar

Power dissipation

83W

Power Dissipation (Max)

83W (Tc)

Pulsed drain current

520A

Rds On (Max) @ Id, Vgs

2.6mOhm @ 50A, 10V

Supplier Device Package

8-QFN (5x6)

Technology

MOSFET (Metal Oxide)

Type of transistor

N-MOSFET

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

2.4V @ 250µA