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DI080N06PQ

DI080N06PQ

MOSFET MOSFET, PowerQFN 5x6, 65V, 80A, N, 80W

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

2796-DI080N06PQTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 5000

Mult: 5000

Order Value

Mouser Electronics

Part Status : New at Mouser

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

637-DI080N06PQ

Factory Lead Time

84 Days

Ware House

US Warehouse

HTS Code

8541210095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

DI080N06PQ-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 5000

Mult: 5000

Order Value

Specifications

Case	QFN5x6
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drain current	73A
Drain to Source Voltage (Vdss)	60V
Drain-source voltage	60V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate charge	56nC
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Gate-source voltage	±20V
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 30V
Kind of channel	enhanced
Kind of package	reel
Kind of package	tape
Manufacturer	DIOTEC SEMICONDUCTOR
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	3.6mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Packaging	Tape & Reel (TR)
Part Status	Active
Polarisation	Unipolar
Power dissipation	80W
Power Dissipation (Max)	80W (Tc)
Pulsed drain current	300A
Rds On (Max) @ Id, Vgs	3.6mOhm @ 40A, 10V
Supplier Device Package	8-QFN (5x6)
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA