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DI038N04PQ2

DI038N04PQ2

MOSFETs MOSFET, PowerQFN 5x6, 45V, 38A, 150C, N

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI038N04PQ2-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 5000

Mult: 5000

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

DI038N04PQ2-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

9 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1250

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

637-DI038N04PQ2

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541210095

Date Code

Within 2 years

Quantity

Min: 5000

Mult: 5000

Order Value

Specifications

Case	QFN5x6
Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drain current	24A
Drain to Source Voltage (Vdss)	45V
Drain-source voltage	45V
FET Feature	-
Gate charge	14nC
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Gate-source voltage	±20V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 30V
Kind of channel	enhanced
Kind of package	tape
Kind of package	reel
Manufacturer	DIOTEC SEMICONDUCTOR
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	17mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Packaging	Bulk
Polarisation	Unipolar
Power - Max	21W (Tc)
Power dissipation	31W
Pulsed drain current	160A
Qualification	-
Rds On (Max) @ Id, Vgs	13.5mOhm @ 10A, 10V
Supplier Device Package	TDSON-8-4
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET x2
Vgs(th) (Max) @ Id	2.5V @ 250µA