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DI035N06PQ2-AQ

DI035N06PQ2-AQ

Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 110A; 35.7W

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

9 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 1250

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

4878-DI035N06PQ2-AQ-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 5000

Mult: 5000

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4555501

Factory Lead Time

64 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

DI035N06PQ2-AQ-DIO

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	QFN5x6
Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drain current	20A
Drain to Source Voltage (Vdss)	60V
Drain-source voltage	60V
FET Feature	Logic Level Gate
Gate charge	14.6nC
Gate Charge (Qg) (Max) @ Vgs	14.6nC @ 10V
Gate-source voltage	±20V
Grade	automotive
Input Capacitance (Ciss) (Max) @ Vds	782pF @ 30V
Kind of channel	enhanced
Kind of package	tape
Kind of package	reel
Manufacturer	DIOTEC SEMICONDUCTOR
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	20mΩ
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	8-PowerTDFN
Packaging	Bulk
Polarisation	Unipolar
Power - Max	35.7W (Tc)
Power dissipation	35.7W
Pulsed drain current	110A
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15mOhm @ 12A, 10V
Supplier Device Package	TDSON-8-4
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET x2
Vgs(th) (Max) @ Id	2.5V @ 250µA